2

Photocapacitance study of pressure-induced deep donors in GaAs: Si

Year:
1987
Language:
english
File:
PDF, 195 KB
english, 1987
12

Understanding defects in semiconductors as key to advancing device technology

Year:
2003
Language:
english
File:
PDF, 264 KB
english, 2003
18

Annealing of the photoluminescence W-center in proton-irradiated silicon

Year:
1999
Language:
english
File:
PDF, 183 KB
english, 1999
20

Dedication

Year:
1993
Language:
english
File:
PDF, 93 KB
english, 1993
27

Application of low temperature GaAs to GaAs/Si

Year:
1993
Language:
english
File:
PDF, 435 KB
english, 1993
32

Physics of Copper in Silicon

Year:
2002
Language:
english
File:
PDF, 455 KB
english, 2002